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Macrocore Provide silicon carbide diode device covers the application range from 1a-40a and 650v-1700v, and has various packaging forms such as TO-220, TO-247 and TO-252. Silicon carbide diode can provide higher reliability and larger surge current capacity in the power conversion system. At the same time, the lower heating characteristics also greatly reduce the overall size of the power supply system.
Macrocore Provide silicon carbide MOSFETs products cover voltage levels of 650V-1700V and provide various specifications from 20 mΩ-1Ω. The main packaging forms are TO247-3L, TO247-4L and other common packaging in industrial fields. SiC MOSFETs ensure low capacitance and gate charge with their low on-resistance and compact chip size. The properties of SiC eliminate trailing current during switching, enabling faster operation and reduced switching losses.
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公司简介
Founded by top R&D experts and experienced engineering teams in power semiconductor industry, with more than decade years of technology accumulation, MCS are committed to develop the new generation of energy-saving and high-efficiency silicon carbide power chips and modules.
The company's headquarter is located in Suzhou Industrial Park, with an area over 5,800 square meters, including two clean rooms and several independent laboratories for IV testing/Dynamic testing/applicaton testing and all kinds of reliability testings.
There are R&D and sales office in Hangzhou&Shenzhen as well, and in Sweden there is MCS overseas sales and R&D center.
MCS has rich experience in SiC industry from material epitaxy, to chip design and simulation, to device manufacturing and testing, to customer applications. The performance of SiC Schottky diodes and SiC MOSFET products all have reached the top level in the worldwide. MCS will continuely make efforts in product upgrading and innovation, drive the company with more creativity and vitality.
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Copyright: Macrocore Semiconductor Ltd. Su ICP Bei 16036591-2