SiC MOSFET
Macrocore Provide silicon carbide MOSFETs products cover voltage levels of 650V-1700V and provide various specifications from 20 mΩ-1Ω. The main packaging forms are TO247-3L, TO247-4L and other common packaging in industrial fields. SiC MOSFETs ensure low capacitance and gate charge with their low on-resistance and compact chip size. The properties of SiC eliminate trailing current during switching, enabling faster operation and reduced switching losses.
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